Chris's Papers on Line-Edge Roughness in Lithography

Line-edge roughness (LER) - The deviation of a feature edge (as viewed top-down) from a smooth, ideal shape. That is, the edge deviations of a feature that occur on a dimensional scale smaller than the resolution limit of the imaging tool that was used to print the feature.

LER is, in my opinion, the ultimate limiter of resolution in lithography, at least the way lithography is currently practiced. It's also a fascinating topic, since it requires a stochastic view of the world rather than the continuum view more commonly employed in lithography modeling. It is the current focus of my personal research.

The papers listed below are available (in PDF format) by clicking on the titles.

  1. C. A. Mack, "Analytic form for the power spectral density in one, two, and three dimensions", Journal of Micro/Nanolithography, MEMS, and MOEMS , Vol. 10, No. 4 (Oct-Dec, 2011) p. 040501.
  2. C. A. Mack, James W. Thackeray, John J. Biafore, and Mark D. Smith, “Stochastic Exposure Kinetics of EUV Photoresists: A Simulation Study”, Journal of Micro/Nanolithography, MEMS, and MOEMS , Vol. 10, No. 3 (Jul-Sep, 2011) p. 033019.
  3. C. A. Mack, John J. Biafore, and Mark D. Smith, “Stochastic Acid-Base Quenching in Chemically Amplified Photoresists: A Simulation Study”, Advances in Resist Technology and Processing XXVIII, Proc., SPIE Vol. 7972 (2011) p. 79720V.
  4. C. A. Mack, “Stochastic modeling of photoresist development in two and three dimensions”, Journal of Micro/Nanolithography, MEMS, and MOEMS , Vol. 9, No. 4 (Oct-Dec, 2010) p. 041202.
  5. Chris Mack, “A Simple Model of Line-Edge Roughness”, Future Fab International, Vol 34 (July 14, 2010).
  6. C. A. Mack, “Line-Edge Roughness and the Ultimate Limits of Lithography”, Advances in Resist Technology and Processing XXVII, Proc., SPIE Vol. 7639 (2010) p. 763931.
  7. C. A. Mack, “Impact of mask roughness on wafer line-edge roughness”, BACUS Symposium on Photomask Technology, Proc., SPIE Vol. 7488 (2009) p. 748828.
  8. C. A. Mack, “Stochastic Modeling in Lithography: The Use of Dynamical Scaling in Photoresist Development”, Journal of Micro/Nanolithography, MEMS, and MOEMS , Vol. 8, No. 3 (Jul-Sep, 2009) p. 033001.
  9. C. A. Mack, “Stochastic Modeling in Lithography: Autocorrelation Behavior of Catalytic Reaction-Diffusion Systems”, Journal of Micro/Nanolithography, MEMS, and MOEMS , Vol. 8, No. 2 (Apr-Jun, 2009) p. 029701.
  10. C. A. Mack, “Stochastic approach to modeling photoresist development”, Journal of Vacuum Science & Technology, Vol. B27, No. 3 (May/Jun, 2009) pp. 1122-1128.

 

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